Spin Current with Z‐Polarization Generated by the Aligned Interfacial Spins of Ultrathin Metallic Antiferromagnetic Layer Under an In Situ Magnetic Field
Abstract Spin‐orbit‐torque induced magnetization switching possesses the advantages of high operation speed and low power consumption, promising for the next generation magnetoresistive random access memory (MRAM). However, the necessity of an auxiliary field for achieving deterministic switching of perpendicular magnetization is the critical bottleneck for practical application. Here, it is demonstrated that an unconventional spin current with perpendicular spin polarization can be generated by the alignment of uncompensated interfacial spins at the ultrathin IrMn/Ta(Ti) or PtMn/Ta(Ti) interfaces prepared with the presence of an in situ field, which allows field‐free switching. Furthermore, due to the pinned interfacial spins exerted by the bulk antiferromagnetic layers, the switching polarity remains unchanged after a disturbance field of 3000 Oe or higher, showing strong writing robustness against stray field disturbance. The work offers a strategy to address the critical bottleneck and promotes the advancement of SOT‐MRAM toward commercialization.
Authors
- Yi Xu (ORCID: https://orcid.org/0000-0002-4198-7521)
- Xinyu Shu (ORCID: https://orcid.org/0009-0009-6992-8513)
- Tiejun Zhou (ORCID: https://orcid.org/0000-0003-2931-2174)
- Yuming Yan (ORCID: https://orcid.org/0000-0002-4931-5439)
- Menghao Jin (ORCID: https://orcid.org/0000-0001-6199-780X)
- Haodong Fan (ORCID: https://orcid.org/0000-0001-5703-2351)
- Qinqin Yu (ORCID: https://orcid.org/0000-0002-0838-3670)
- Changqiu Yu (ORCID: https://orcid.org/0000-0002-1762-7104)
- Mengxi Wang (ORCID: https://orcid.org/0000-0003-2071-0838)
- Mingzhang Wei (ORCID: https://orcid.org/0000-0003-3676-921X)
- Tao Zhu (ORCID: https://orcid.org/0000-0001-7672-0192)
- Shengru Chen (ORCID: https://orcid.org/0000-0002-7656-2427)
- Zhongshu Feng
- Chao Wang (ORCID: https://orcid.org/0000-0003-4082-1324)
- Shiqi Liu (ORCID: https://orcid.org/0000-0003-3230-9099)
- Yichao Zhou (ORCID: https://orcid.org/0000-0003-3067-7963)
- Bo Liu (ORCID: https://orcid.org/0000-0003-1685-7968)
Institutions
- Chinese Academy of Sciences (CN)
- National Engineering Research Center of Electromagnetic Radiation Control Materials (CN)
- Institute of Physics (CN)
- Hangzhou Dianzi University (CN)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2025-05-23
- DOI
- https://doi.org/10.1002/adfm.202500201
- Citations
- 1
- Primary Topic
- Magnetic properties of thin films
- Type
- article
- Field-Weighted Citation Impact
- 1.25
Funders
- National Natural Science Foundation of China
- Guangdong Province Introduction of Innovative R&D Team
- Natural Science Foundation of Zhejiang Province