Metal oxide-based resistive switching memristors for neuromorphic computing
Metal oxide-based resistive switching memristors are emerging as promising nanodevices for the hardware implementation of neuromorphic computing. We focus on the development of a neuromorphic computing system based on metal oxide memristors.
Authors
- Jingyao Bian (ORCID: https://orcid.org/0009-0004-3072-332X)
- Yankun Cheng
- Xiaoning Zhao (ORCID: https://orcid.org/0000-0002-0082-2288)
- Xuanyu Shan (ORCID: https://orcid.org/0000-0002-6161-7835)
- Qiaoling Tian
- Zhongqiang Wang (ORCID: https://orcid.org/0000-0002-1133-6058)
- Jiahui Zheng (ORCID: https://orcid.org/0000-0003-3758-9149)
- Yichun Liu
Institutions
- Northeast Normal University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01467k
- Citations
- 20
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 14.61