Numerical Modeling of InAs/InP Quantum Dash Ridge Lasers as a Function of Temperature

Monolithic mode-locked diode lasers based on InAs/InP quantum dashes offer an inexpensive and efficient platform for spectral comb generation. These combs are used in dense wavelength division multiplexing schemes within optical fiber interconnects and frequency references in metrology. Depending on the application, integration can require operation at elevated temperatures, reducing light conversion efficiency. The lasers studied in this work are monolithic 1.55 μm InAs/InP quantum dash cleave/cleave ridge waveguide lasers. We demonstrate performance over temperature and show numerical optoelectronic modelling of said device using Crosslight PICS3D. We discuss the limitations that arise when using an established industry modelling tool to simulate novel devices with complex physics. While the model has potential to predict of a narrow set of properties tied predominantly to carrier transport, its limitations point towards using more bespoke models to capture the complex physics of mode-locking.