An On-Chip Reconfigurable Front-End for Ultra-Low-Power RF Energy Harvesting

This brief presents a reconfigurable dual-output front-end for ultra-low-power (ULP) RF energy harvesting applications, demonstrating a stable output voltage ranging from 1.3 V to 1.8 V over a wide input power range of -22.5 dBm to -3 dBm. The proposed design incorporates a novel knockout-based reconfigurable architecture with dual outputs and a self-compensation dual-stage cross-coupled differential-drive (CCDD) rectifier topology, enabling efficient output control for ultra-low-power systems while maintaining high efficiency and sensitivity. Implemented in 40 nm CMOS technology, the 4-stage 900 MHz rectifier achieves a peak power conversion efficiency (PCE) of 42.8% at -20 dBm input with 0.5 MΩ load, along with an measured -23.6 dBm sensitivity at 1 V output voltage under 1 MΩ load.

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Publication Details

Journal
IEEE Transactions on Circuits & Systems II Express Briefs
Published
2025-05-22
DOI
https://doi.org/10.1109/tcsii.2025.3572617
Citations
3
Primary Topic
Energy Harvesting in Wireless Networks
Type
article
Field-Weighted Citation Impact
2.19
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article

An On-Chip Reconfigurable Front-End for Ultra-Low-Power RF Energy Harvesting

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IEEE Transactions on Circuits & Systems II Express Briefs
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article

An On-Chip Reconfigurable Front-End for Ultra-Low-Power RF Energy Harvesting

Jie Yang, Wenjun Zou, Hui Wu, Mohamad Sawan, Jinbo Chen, Xing Liu
article en
3 citations

Abstract

This brief presents a reconfigurable dual-output front-end for ultra-low-power (ULP) RF energy harvesting applications, demonstrating a stable output voltage ranging from 1.3 V to 1.8 V over a wide input power range of -22.5 dBm to -3 dBm. The proposed design incorporates a novel knockout-based reconfigurable architecture with dual outputs and a self-compensation dual-stage cross-coupled differential-drive (CCDD) rectifier topology, enabling efficient output control for ultra-low-power systems while maintaining high efficiency and sensitivity. Implemented in 40 nm CMOS technology, the 4-stage 900 MHz rectifier achieves a peak power conversion efficiency (PCE) of 42.8% at -20 dBm input with 0.5 MΩ load, along with an measured -23.6 dBm sensitivity at 1 V output voltage under 1 MΩ load.

IEEE Transactions on Circuits & Systems II Express BriefsVol. 72(11)
Westlake University (CN)
Affordable and clean energy
Openalex Percentile: Top 12%
Energy Harvesting in Wireless Networks
2.19
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