Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs
The trench gate or U-groove MOSFET (UMOSFET) has become widely adopted as a semiconductor device globally, gradually replacing the traditional vertical double-diffused MOSFET (DMOSFET) in many applications. Evaluating the reliability of UMOSFETs regarding neutron-induced radiation effects is crucial for understanding their response to ubiquitous atmospheric neutrons. This study presents comparative experimental and computational results of Single-Event Effects induced by monoenergetic fast neutrons in UMOS and DMOS power transistors. Experiments demonstrate that UMOSFETs exhibit premature particle-induced avalanche multiplication effects compared to similarly rated DMOSFETs, which may favor destructive radiation effects, such as Single-Event Burnout, when operating in the terrestrial radiation environment.
Authors
- Odair Lélis Gonçalez (ORCID: https://orcid.org/0000-0003-3446-5159)
- N. H. Medina (ORCID: https://orcid.org/0000-0003-0650-6507)
- Tássio Côrtes Cavalcante (ORCID: https://orcid.org/0000-0002-5205-0830)
- N. Added (ORCID: https://orcid.org/0000-0001-9611-8721)
- Rafael G. Vaz (ORCID: https://orcid.org/0000-0002-1456-6748)
- Matheus S. Pereira (ORCID: https://orcid.org/0000-0002-4141-7166)
- A. Paccagnella (ORCID: https://orcid.org/0000-0002-6850-4286)
- Vitor A. P. Aguiar (ORCID: https://orcid.org/0000-0001-6199-0800)
- Alexis C. Vilas-Bôas (ORCID: https://orcid.org/0000-0002-5975-5518)
- J. Wyss (ORCID: https://orcid.org/0000-0002-8277-4012)
- Cláudio Antonio Federico (ORCID: https://orcid.org/0000-0002-8263-0270)
- Saulo G. Alberton (ORCID: https://orcid.org/0000-0002-7390-3660)
- M. Guazzelli (ORCID: https://orcid.org/0000-0001-7110-7241)
- Evaldo Carlos Fonseca Pereira
Institutions
- University of Padua (IT)
- Centro Universitário FEI (BR)
- Atos (France) (FR)
- Universidade de São Paulo (BR)
- Università degli studi di Cassino e del Lazio Meridionale (IT)
- Instituto Nacional de Pesquisas Espaciais (BR)
Publication Details
- Journal
- IEEE Transactions on Device and Materials Reliability
- Published
- 2025-05-22
- DOI
- https://doi.org/10.1109/tdmr.2025.3572829
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Fundação de Amparo à Pesquisa do Estado de São Paulo
- Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
- Conselho Nacional de Desenvolvimento Científico e Tecnológico
- Financiadora de Estudos e Projetos
- Instituto Nacional de Ciência e Tecnologia: Física Nuclear e Aplicações