Laser lift-off of ultraviolet-C light-emitting-diode epitaxial layers with an AlGaN nucleation layer grown on a sapphire substrate
Abstract Substrate delamination due to laser lift-off (LLO) at sapphire/Al-rich AlGaN epitaxial layer interfaces in AlGaN-based light-emitting diodes (LEDs) is under-explored. We demonstrated substrate delamination in AlGaN-based ultraviolet-C LEDs grown on sapphire substrates using the LLO method and evaluated the delaminated interface structure. When the AlGaN epitaxial layer was irradiated by a 196 nm excimer laser from the back side of the sapphire substrate, a damaged area formed only on the sapphire side at the peeling interface, and not on the laser-light-absorbing epitaxial layer. These results will accelerate the development of LLO technology for growing AlGaN-based epitaxial layers on sapphire substrates.
Authors
- Satoshi Kamiyama (ORCID: https://orcid.org/0000-0003-2246-6488)
- Masaki Ohya (ORCID: https://orcid.org/0009-0009-5985-2199)
- Yoshiki Saito (ORCID: https://orcid.org/0000-0003-3212-6356)
- M. Fujita (ORCID: https://orcid.org/0009-0004-0265-2077)
- Hisanori Ishiguro (ORCID: https://orcid.org/0009-0008-4192-7626)
- S. Miura (ORCID: https://orcid.org/0000-0001-5603-3205)
- Koji Okuno (ORCID: https://orcid.org/0000-0002-7811-5065)
- Motoaki Iwaya (ORCID: https://orcid.org/0000-0002-4889-706X)
- Tetsuya Takeuchi (ORCID: https://orcid.org/0000-0001-6683-1673)
- Naoki Hamashima
- Ryunosuke Oka
- Hachizo Muto
- Teppei Takehisa
Institutions
- Toyoda Gosei (Japan) (JP)
- Meijo University (JP)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2025-05-22
- DOI
- https://doi.org/10.35848/1347-4065/addc21
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of the Environment, Government of Japan