High-performance broadband photodetectors based on b-As0.5P0.5 for infrared optical communication and imaging

Infrared (IR) photodetectors (PDs) are crucial for medical imaging, optical communication, security surveillance, remote sensing, and gas identification.In this Letter, we systematically investigated a room temperature IR PD based on twodimensional b-As 0.5 P 0.5 , a relatively unexplored component of b-AsP alloys.We synthesized high-quality b-As 0.5 P 0.5 flakes via the chemical vapor transport (CVT) method with precisely controlled conditions.The fabricated b-As 0.5 P 0.5 PD exhibits excellent photoconductivity, high responsivity, and a fast response in the visible and near-infrared (Vis-NIR) band.It achieves a responsivity of 0.209 AW -1 and a response time of 16.6 s under 1550 nm IR illumination.High-resolution single-pixel point optical imaging and high-speed optical communication were realized by the b-As 0.5 P 0.5 PDs.This study confirms that b-As 0.5 P 0.5 materials are highly promising for advanced IR optoelectronic applications.