Impact of Halo Doping on the Electrical Performance of Gate-All-Around Field Effect Transistors (GAAFETs)

This work deals with the performance of Gate-All-Around Field Effect Transistors (GAAFETs) as influenced by halo doping, wherein structural and electrical characteristics are explored. A comparative study is undertaken on GAAFET structures doped with halo and those not doped, from which primary observations are inferred based on the parameters of drain current, transconductance, and electric field distributions. Including halo doping introduces localized doping near the source and drain, enhancing electrostatic control, reducing leakage currents, and mitigating short-channel effects. Halo doping yields a greater subthreshold slope and better carrier confinement, as highlighted by sharper transitions in the drain current characteristics and a great decrease in offstate leakage. Transconductance analysis indicates that the gate control is effective, and current response is greater in drain current modulation. Also, electric field comparison highlights the stronger perpendicular and total electric fields near the critical regions, enhancing carrier confinement and increasing isolation between the source and drain. The results show that halo doping not only improves the performance metrics of GAAFETs, including drive current and switching efficiency, but also helps overcome the challenges associated with scaling. This work highlights the role of halo doping as a design approach for optimizing advanced transistor architectures and sheds light on its potential for next-generation low-power, high-performance electronic applications.