Enhanced Performance of Two- Stage Operational Amplifier Through Dual-Gate CNTFET Technology

An optimistic option for upcoming electronic devices with small potential power, small-voltage mixed circuit applications are the carbon nanotube field-effect transistor (CNTFET). A small-voltage, small-power, two-stage operational amplifier (OP AMP) on cutting-edge automation CNTFET was introduced in this paper. The suggested Dual gate-CNTFET (DG-CNTFET) operational amplifier (OP AMP) performance characteristics are examined and contrasted with those of the current CMOS sub-32nm technology. HSPICE and cadence software is used to simulate a circuit at an input supply voltage of 2V to determine the performance parameters of the operational amplifier [2]. Based on simulation results, the suggested DG-CNTFET OP AMP circuit achieves more DC gain of over 40dB, more band width gains up to 196MHz, phase margin of 45degrees, output swing of 2V, settling time of O.85ns, CMRR of 53.54dB, PSRR of 53.54dB, and small static power usage of 10W. The outputs indicate the carbon nanotube (CNT) operational amplifier has promise for small power, more speed implementation in mixed-signal and analog nano electronic circuits