Active Gate Drive Based on Negative Feedback for SiC MOSFETs to Suppress Crosstalk Parasitic Oscillation and Avoid Decreased Efficiency

The high switching speed of SiC MOSFETs can induce resonance between parasitic inductors and capacitors, owing to rapid changes in current and voltage, leading to excessive crosstalk parasitic oscillation. This can increase SiC MOSFETs’ gate oxide voltage stress, reducing their service life and even directly leading to gate overvoltage failure. However, there is still a lack of investigations of active control of gate driving in systematic converters because crosstalk parasitic oscillation, indicated by high frequencies in MHz, is challenging to control in a power converter with gate voltage stability and high switching speed. This paper investigates an active gate drive based on negative feedback to fully drive SiC MOSFETs with high efficiency and stable gate voltage to exploit the advantages of high dv/dt over 20 V/ns in SiC MOSFETs and further realize the miniaturization of power conversion systems. It first investigates a dynamic model of SiC MOSFET gate-interfered oscillation in parallel application derived from a circuit with equivalent junction capacitance in power devices. Then, the operating principle of the Negative Feedback Active Gate Drive (NFAGD) application strategy for parallel SiC MOSFETs is demonstrated. Finally, the experiment verifies the proposed strategy’s effectiveness in suppressing crosstalk parasitic oscillation in parallel SiC MOSFETs, and an 8 kW synchronous buck converter prototype is built to verify the NFAGD’s performance in systematic converter applications.