Balanced electron and hole transfer behavior enabled approaching 19% efficiency in thick-film organic solar cells with improved fill factor

In this study, a high FF was achieved in thick-film OSCs with a thickness of 300 nm by balancing electron and hole transfer, yielding a high power conversion efficiency (PCE) of 18.92%.

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Publication Details

Journal
Energy & Environmental Science
Published
2025-01-01
DOI
https://doi.org/10.1039/d5ee01190f
Citations
4
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
2.92
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article

Balanced electron and hole transfer behavior enabled approaching 19% efficiency in thick-film organic solar cells with improved fill factor

Zhongwei Ge, Jia-Wei Qiao, Xiaotao Hao, Wei Ma et al.
4 citations
Energy & Environmental Science
Thin-Film Transistor Technologies
2.92
article

Balanced electron and hole transfer behavior enabled approaching 19% efficiency in thick-film organic solar cells with improved fill factor

Zhongwei Ge, Jia-Wei Qiao, Xiaotao Hao, Wei Ma, Guanghao Lu, Yanming Sun, R. Y. Gu, Wenqing Zhang, Xiaoming Li, Bohao Song
article en
4 citations

Abstract

In this study, a high FF was achieved in thick-film OSCs with a thickness of 300 nm by balancing electron and hole transfer, yielding a high power conversion efficiency (PCE) of 18.92%.

Energy & Environmental ScienceVol. 18(13)
Zhejiang International Studies University (CN), Shandong University (CN), State Key Laboratory of Crystal Materials, Beihang University (CN), Xi'an Jiaotong University (CN)
Openalex Percentile: Top 9%
Thin-Film Transistor Technologies
2.92
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