Research on proton irradiation of SiC high-voltage power semiconductor devices

Power semiconductor devices are critical components of all power electronic systems, controlling half of the world's electricity. The performance of these devices determines the efficiency, performance, and size of power electronic systems. With the advancement of technology, especially in aerospace, nuclear, and military fields, there is an urgent need for high-performance, compact power electronic systems that can operate in harsh high-temperature and high-radiation environments. Since the 1950s, when solid-state devices replaced vacuum tubes, silicon (Si)-based devices have become the mainstream power semiconductor devices. Over the past few decades, their performance has significantly improved. For breakdown voltages below 200V, Si-based Schottky diodes and power MOSFETs have been commercialized and widely used. However, at higher breakdown voltages, the drift region resistance of Si-based devices increases rapidly, leading to higher power losses and the need for extensive cooling equipment. With the development of technology, particularly in aerospace, nuclear, and military applications, there is a growing demand for high-power, high-efficiency, compact power electronic systems that can operate in extreme environments. Existing Si-based power devices are limited by their material properties and can no longer meet these requirements. Silicon carbide (SiC) has gained attention due to its excellent high-temperature, high-frequency, and high-voltage performance. As a third-generation wide-bandgap semiconductor material, SiC offers advantages such as a wide bandgap, high breakdown electric field, high electron saturation velocity, and high thermal conductivity. Devices made from SiC are suitable for high-frequency, high-voltage, high-power, high-temperature, and radiation-resistant applications, making them ideal for aerospace applications. However, in aerospace environments, space radiation can cause damage to electronic components, leading to catastrophic failures. The stability of these devices under high-radiation conditions is a critical issue. Proton irradiation is a common high-radiation environment, making the study of SiC high-voltage power semiconductor devices under proton irradiation particularly important. This paper addresses the challenges faced by 4H-SiC VDMOSFET (4H-SiC Vertical Double-diffused MOSFET) devices in radiation environments by conducting proton irradiation experiments and simulations on these devices and their key structures.