Double-sided cooling power modules integrating vapor chamber with excellent heat dissipation performance

Compared with silicon-based chips, silicon carbide (SiC) chips have a smaller chip area and higher power density. Silicon carbide power modules generate a lot of heat during operation. If heat is not dissipated effectively, the internal temperature may rise too high, which may lead to a decline in the performance of power electronic devices, accelerated material aging, or even damage. Conventional single-sided cooling (SSC) power modules exhibit limited heat dissipation capacity, rendering them insufficient for accommodating the escalating heat flux demands. This paper proposes a double-sided cooling power module integrating Vapor Chamber (VC) with excellent heat dissipation performance. The Vapor Chamber filled with phase change material (PCM) is embedded in the module and direct attachment of the Vapor Chamber to the chips is achieved. This structure allows the Vapor Chamber to not only provide electrical connections but also rapidly dissipate the heat generated by the chips, maintaining stable chip temperatures. Through simulations and experimental verification, a comparative analysis with three other modules is conducted, the proposed module was shown to demonstrate significant improvements in both thermal resistance and the reduction of junction temperature. Compared to other modules, this module's maximum junction temperature was reduced by more than 20% under the same operating conditions, with chip junction temperature fluctuations controlled within 7°C, while the module's junction-to-case thermal resistance was decreased by approximately 38%. This power module represents a significant breakthrough in thermal performance, making it particularly suitable for electronic devices that require good heat dissipation.