Room-temperature spin transport through band-to-band tunneling at semiconductor <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="
p-n junctions are utilized in almost all semiconductor devices. Here the authors present room-temperature electrical spin injection, transport, and detection via band-to-band tunneling in p-n-junction germanium devices. Their approach offers good insight for operating a spin-based tunnel field-effect transistor at room temperature (rather than at low temperature, as in the past), and the prospect of room-temperature semiconductor spintronics is quite exciting.
Authors
- Susumu Fujii (ORCID: https://orcid.org/0000-0003-4650-5752)
- Kentarou Sawano (ORCID: https://orcid.org/0000-0001-9163-1681)
- K. Oki (ORCID: https://orcid.org/0000-0001-5130-9065)
- Keisuke Yamamoto (ORCID: https://orcid.org/0000-0001-8730-598X)
- Takamasa Usami (ORCID: https://orcid.org/0000-0001-9478-7331)
- Kohei Hamaya (ORCID: https://orcid.org/0000-0002-5473-6086)
- Shigenori Ueda (ORCID: https://orcid.org/0000-0001-9425-0614)
- Shuya Kikuoka
Institutions
- Tokyo City University (JP)
- Kumamoto University (JP)
- The University of Osaka (JP)
Publication Details
- Journal
- Physical Review Applied
- Published
- 2025-05-22
- DOI
- https://doi.org/10.1103/physrevapplied.23.l051005
- Citations
- 2
- Primary Topic
- Quantum and electron transport phenomena
- Type
- article
- Field-Weighted Citation Impact
- 2.49
Funders
- Ministry of Education, Culture, Sports, Science and Technology
- Japan Society for the Promotion of Science
- Core Research for Evolutional Science and Technology