Temperature Dependence of Optical Polarization in AlGaN‐Based Multiple Quantum Wells with Emission Wavelengths of 220–260 nm

The optical polarization properties of band‐edge emission in AlGaN‐based multiple quantum wells (MQWs) grown on face‐to‐face‐annealed sputter‐deposited AlN templates are investigated by polarization‐dependent photoluminescence spectroscopy. It is found that luminescence polarized with E || c is predominant in the MQW with an emission wavelength of ≈220 nm, while luminescence polarized with E ⊥ c is predominant in the MQWs with emission wavelengths of about 240 and 260 nm. In addition, the absolute values of the optical polarization degrees (OPDs) of the MQWs with emission wavelengths of ≈220 and 260 nm decrease with increasing temperature. This change can be explained by the thermal redistribution of excitons or carriers between valence bands. Furthermore, the effect of the temperature dependence of the OPD on the evaluation of internal quantum efficiency (IQE) is discussed, and it is found that the change in the OPD with temperature may lead to both overestimation and underestimation of the IQE.

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Publication Details

Journal
physica status solidi (b)
Published
2025-05-22
DOI
https://doi.org/10.1002/pssb.202500110
Citations
2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
2.52

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article

Temperature Dependence of Optical Polarization in AlGaN‐Based Multiple Quantum Wells with Emission Wavelengths of 220–260 nm

Akihiko Sasaki, Hiromasa Hayashi, Hideaki Murotani, Narihito Okada et al.
2 citations
physica status solidi (b)
GaN-based semiconductor devices and materials
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article

Temperature Dependence of Optical Polarization in AlGaN‐Based Multiple Quantum Wells with Emission Wavelengths of 220–260 nm

Akihiko Sasaki, Hiromasa Hayashi, Hideaki Murotani, Narihito Okada, Satoshi Kurai, Hideto Miyake, Ryota Akaike, Yoichi Yamada, Kaichi Tani
article en
2 citations

Abstract

The optical polarization properties of band‐edge emission in AlGaN‐based multiple quantum wells (MQWs) grown on face‐to‐face‐annealed sputter‐deposited AlN templates are investigated by polarization‐dependent photoluminescence spectroscopy. It is found that luminescence polarized with E || c is predominant in the MQW with an emission wavelength of ≈220 nm, while luminescence polarized with E ⊥ c is predominant in the MQWs with emission wavelengths of about 240 and 260 nm. In addition, the absolute values of the optical polarization degrees (OPDs) of the MQWs with emission wavelengths of ≈220 and 260 nm decrease with increasing temperature. This change can be explained by the thermal redistribution of excitons or carriers between valence bands. Furthermore, the effect of the temperature dependence of the OPD on the evaluation of internal quantum efficiency (IQE) is discussed, and it is found that the change in the OPD with temperature may lead to both overestimation and underestimation of the IQE.

physica status solidi (b)Vol. 262(12)
Tokuyama (Japan) (JP), Yamaguchi University (JP), Mie University (JP), National Institute of Technology, Tokuyama College (JP)
Japan Society for the Promotion of Science
Openalex Percentile: Top 11%
GaN-based semiconductor devices and materials
2.52
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