Thermal Stability of Vertical Type Shunt Resistors for Use in Double Side Cooling SiC Power Modules

This study presents the design and development of vertical-type shunt resistors with a compact form factor, specifically tailored for use in high-power-density SiC power modules. The newly developed vertical shunt resistors achieve significant reductions in both geometrical volume and resistance, with a measured resistance as low as 42 µΩ. Additionally, the vertical configuration effectively minimizes the welding heat-affected zone (HAZ) during manufacturing, outperforming conventional shunt resistors. The advanced vertical shunt resistors developed by KOSTECSYS exhibit exceptional microstructural integrity, maintaining robust reliability of the diffusion-bonded Cu/Mn/Cu interfaces even after thermal aging for 500 hours at 250°C.

Authors

Institutions

Publication Details

Published
2025-04-15
DOI
https://doi.org/10.23919/icep-iaac64884.2025.11002899
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Thermal Stability of Vertical Type Shunt Resistors for Use in Double Side Cooling SiC Power Modules

YehRi Kim, Byeongchan Kim, Tao Han, Dongjin Kim et al.
Silicon Carbide Semiconductor Technologies
article

Thermal Stability of Vertical Type Shunt Resistors for Use in Double Side Cooling SiC Power Modules

YehRi Kim, Byeongchan Kim, Tao Han, Dongjin Kim, K. Han
article en

Abstract

This study presents the design and development of vertical-type shunt resistors with a compact form factor, specifically tailored for use in high-power-density SiC power modules. The newly developed vertical shunt resistors achieve significant reductions in both geometrical volume and resistance, with a measured resistance as low as 42 µΩ. Additionally, the vertical configuration effectively minimizes the welding heat-affected zone (HAZ) during manufacturing, outperforming conventional shunt resistors. The advanced vertical shunt resistors developed by KOSTECSYS exhibit exceptional microstructural integrity, maintaining robust reliability of the diffusion-bonded Cu/Mn/Cu interfaces even after thermal aging for 500 hours at 250°C.

Korea Institute of Industrial Technology (KR)
Affordable and clean energy
Openalex Percentile: Top 91%
Silicon Carbide Semiconductor Technologies
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.