Thermal Stability of Vertical Type Shunt Resistors for Use in Double Side Cooling SiC Power Modules
This study presents the design and development of vertical-type shunt resistors with a compact form factor, specifically tailored for use in high-power-density SiC power modules. The newly developed vertical shunt resistors achieve significant reductions in both geometrical volume and resistance, with a measured resistance as low as 42 µΩ. Additionally, the vertical configuration effectively minimizes the welding heat-affected zone (HAZ) during manufacturing, outperforming conventional shunt resistors. The advanced vertical shunt resistors developed by KOSTECSYS exhibit exceptional microstructural integrity, maintaining robust reliability of the diffusion-bonded Cu/Mn/Cu interfaces even after thermal aging for 500 hours at 250°C.
Authors
- YehRi Kim
- Byeongchan Kim (ORCID: https://orcid.org/0009-0007-7113-9906)
- Tao Han (ORCID: https://orcid.org/0000-0003-3602-4859)
- Dongjin Kim (ORCID: https://orcid.org/0000-0002-6814-6132)
- K. Han
Institutions
- Korea Institute of Industrial Technology (KR)
Publication Details
- Published
- 2025-04-15
- DOI
- https://doi.org/10.23919/icep-iaac64884.2025.11002899
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00