Pre-Treatment for Adhesion Layer in Panel-Level Sputtering Applying an Improved Linear Ion Source
We developed a Linear Ion Source (LIS) for 510 x 515 mm panel substrates and applied it to the pretreatment for seed layer formation. On Ajinomoto Build-up Film (ABF), LIS pretreatment achieved sufficient adhesion comparable to existing Capacitively Coupled Plasma (CCP) pretreatment. Furthermore, the sputtering process using LIS pretreatment was confirmed to be effective for copper filling in Through Glass Via (TGV). These results indicate that LIS is a promising method for pretreatment of sputtering process on large-area substrates.
Authors
- Akio Higashi
- Yasuhiro Morikawa
- M. Wakai (ORCID: https://orcid.org/0000-0003-2818-3155)
- T. Terasawa (ORCID: https://orcid.org/0000-0003-2507-9803)
- Takumi Yuze
- Atsuhito Ihori
Publication Details
- Published
- 2025-04-15
- DOI
- https://doi.org/10.23919/icep-iaac64884.2025.11002958
- Primary Topic
- Metal and Thin Film Mechanics
- Type
- article
- Field-Weighted Citation Impact
- 0.00