Pre-Treatment for Adhesion Layer in Panel-Level Sputtering Applying an Improved Linear Ion Source

We developed a Linear Ion Source (LIS) for 510 x 515 mm panel substrates and applied it to the pretreatment for seed layer formation. On Ajinomoto Build-up Film (ABF), LIS pretreatment achieved sufficient adhesion comparable to existing Capacitively Coupled Plasma (CCP) pretreatment. Furthermore, the sputtering process using LIS pretreatment was confirmed to be effective for copper filling in Through Glass Via (TGV). These results indicate that LIS is a promising method for pretreatment of sputtering process on large-area substrates.

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Publication Details

Published
2025-04-15
DOI
https://doi.org/10.23919/icep-iaac64884.2025.11002958
Primary Topic
Metal and Thin Film Mechanics
Type
article
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article

Pre-Treatment for Adhesion Layer in Panel-Level Sputtering Applying an Improved Linear Ion Source

Akio Higashi, Yasuhiro Morikawa, M. Wakai, T. Terasawa et al.
1 links
Metal and Thin Film Mechanics
article

Pre-Treatment for Adhesion Layer in Panel-Level Sputtering Applying an Improved Linear Ion Source

Akio Higashi, Yasuhiro Morikawa, M. Wakai, T. Terasawa, Takumi Yuze, Atsuhito Ihori
article en

Abstract

We developed a Linear Ion Source (LIS) for 510 x 515 mm panel substrates and applied it to the pretreatment for seed layer formation. On Ajinomoto Build-up Film (ABF), LIS pretreatment achieved sufficient adhesion comparable to existing Capacitively Coupled Plasma (CCP) pretreatment. Furthermore, the sputtering process using LIS pretreatment was confirmed to be effective for copper filling in Through Glass Via (TGV). These results indicate that LIS is a promising method for pretreatment of sputtering process on large-area substrates.

Openalex Percentile: Top 88%
Metal and Thin Film Mechanics
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