A Fundamental Study on Interfacial Properties of Indium Thermal Interface Materials
This study investigates the interfacial reactions and thermal properties of a die/In/die sandwich structure, utilizing indium as a thermal interface material (TIM). The bonding process was performed at 180°C under a 20 kg load for varying durations, followed by thermal aging at 150°C for up to 1000 hours. Cross-sectional analyses identified the formation of inter metallic compounds (IMCs) at the interface. Thermal resistance, measured using the ASTM D5470 method, revealed the effects of bond line thickness, reaction time, and temperature on performance. This study highlights the relationship between IMC growth and thermal resistance, providing guidance for optimizing bonding parameters in electronic packaging.
Authors
- Shih‐kang Lin (ORCID: https://orcid.org/0000-0002-0832-3213)
- Chongxiang Pan
- Kuan-Chen Kung
- P.-A. Juan
Institutions
- Taiwan Semiconductor Manufacturing Company (Taiwan) (TW)
- National Cheng Kung University (TW)
Publication Details
- Published
- 2025-04-15
- DOI
- https://doi.org/10.23919/icep-iaac64884.2025.11002889
- Primary Topic
- Thermal properties of materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00