High Gain SIW-Fed Notched Spherical-Frustum Shaped Stacked DRA for B5G Application

This paper introduces a high gain slotted substrate integrated waveguide (SIW) fed dielectric resonator antenna (DRA). To achieve high gain, a stacked, notched spherical-conical DRA structure is placed on the SIW. The proposed antenna exhibits a 250 MHz (5.25-5.50 GHz) bandwidth. This antenna is linearly polarized and shows a peak gain of 8.4 dBi. The antenna offers a broadside radiation pattern. The co-polarization and cross-polarization differences are above 45 dB for the H-plane and E-plane in the broadside direction. Due to this, the antenna can provide better signal quality and a higher signal-to-noise ratio (SNR). The front-to-back ratio (F/B ratio) of this antenna is 21.6 dB. The half-power beam width (HPBW) of this antenna is 51.5°. The bandwidth, gain, and radiation pattern measurement is done for the fabricated antenna prototype. High gain, broadside radiation pattern and wider beam width make it suitable for applications beyond fifth-generation (B5G).

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Publication Details

Published
2025-03-30
DOI
https://doi.org/10.23919/eucap63536.2025.10999924
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26

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article

High Gain SIW-Fed Notched Spherical-Frustum Shaped Stacked DRA for B5G Application

Sidhartha Kumar Sahu, Ramesh Kumar Sonkar, Rakhesh Singh Kshetrimayum, Arvind Kumar
1 citations
GaN-based semiconductor devices and materials
1.26
article

High Gain SIW-Fed Notched Spherical-Frustum Shaped Stacked DRA for B5G Application

Sidhartha Kumar Sahu, Ramesh Kumar Sonkar, Rakhesh Singh Kshetrimayum, Arvind Kumar
article en
1 citations

Abstract

This paper introduces a high gain slotted substrate integrated waveguide (SIW) fed dielectric resonator antenna (DRA). To achieve high gain, a stacked, notched spherical-conical DRA structure is placed on the SIW. The proposed antenna exhibits a 250 MHz (5.25-5.50 GHz) bandwidth. This antenna is linearly polarized and shows a peak gain of 8.4 dBi. The antenna offers a broadside radiation pattern. The co-polarization and cross-polarization differences are above 45 dB for the H-plane and E-plane in the broadside direction. Due to this, the antenna can provide better signal quality and a higher signal-to-noise ratio (SNR). The front-to-back ratio (F/B ratio) of this antenna is 21.6 dB. The half-power beam width (HPBW) of this antenna is 51.5°. The bandwidth, gain, and radiation pattern measurement is done for the fabricated antenna prototype. High gain, broadside radiation pattern and wider beam width make it suitable for applications beyond fifth-generation (B5G).

Indian Institute of Technology Guwahati (IN), Visvesvaraya National Institute of Technology (IN)
Science and Engineering Research Board
Zero hunger
Openalex Percentile: Top 21%
GaN-based semiconductor devices and materials
1.26
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