High Gain SIW-Fed Notched Spherical-Frustum Shaped Stacked DRA for B5G Application
This paper introduces a high gain slotted substrate integrated waveguide (SIW) fed dielectric resonator antenna (DRA). To achieve high gain, a stacked, notched spherical-conical DRA structure is placed on the SIW. The proposed antenna exhibits a 250 MHz (5.25-5.50 GHz) bandwidth. This antenna is linearly polarized and shows a peak gain of 8.4 dBi. The antenna offers a broadside radiation pattern. The co-polarization and cross-polarization differences are above 45 dB for the H-plane and E-plane in the broadside direction. Due to this, the antenna can provide better signal quality and a higher signal-to-noise ratio (SNR). The front-to-back ratio (F/B ratio) of this antenna is 21.6 dB. The half-power beam width (HPBW) of this antenna is 51.5°. The bandwidth, gain, and radiation pattern measurement is done for the fabricated antenna prototype. High gain, broadside radiation pattern and wider beam width make it suitable for applications beyond fifth-generation (B5G).
Authors
- Sidhartha Kumar Sahu
- Ramesh Kumar Sonkar (ORCID: https://orcid.org/0000-0001-8172-0277)
- Rakhesh Singh Kshetrimayum (ORCID: https://orcid.org/0000-0002-3383-2028)
- Arvind Kumar (ORCID: https://orcid.org/0000-0002-9695-4399)
Institutions
- Indian Institute of Technology Guwahati (IN)
- Visvesvaraya National Institute of Technology (IN)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.23919/eucap63536.2025.10999924
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26
Funders
- Science and Engineering Research Board