Ultra-Thin-Body and Buried Oxide FD-SOI next generation nodes and eNVM technologies for advanced IC design

The European FAMES Pilot Line addresses a set of technologies including fully depleted silicon-on-insulator technology advanced nodes and embedded non-volatile memories. This paper addresses these two technologies and the programs planned to help designers to use these technologies at their best. The specific electrical properties of FD-SOI devices, are discussed, both in terms of transistor modelling and process highlighting the levers exploited to boost the performance of the future 10-7nm nodes will be also highlighted. The paper also address embedded Non-Volatile Memory (eNVM) devices integrated in the BEOL of advanced FD-SOI CMOS technologies with the aim to open opportunities for disruptive IC architectures and designs using the most appropriate eNVM for the considered applications. OxRAM, FeRAM, BEOL FeFET and MRAM are addressed in FAMES and in the paper and potential new applications are discussed. Finally, the way these technologies are provided to designers through training programs is described.