Elimination of Leakage in NaOH-Activated Cu/SiO<sub>2</sub> Hybrid Bonding for Plasma-Free Surface Activation Scheme
In this study, the effect of NaOH wet treatment on the leakage current in Cu/SiO2 hybrid structures is investigated. Samples with a comb-comb structure were treated with NaOH solution, followed by various post-cleaning steps. The leakage current (LC) behavior was observed after rinsing with deionized water (DIW) for 30 s, which was attributed to the residual of Na<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ions. However, extending the cleaning duration either using rinsing or sonication to 5 min effectively eliminated the LC behavior. These results emphasized the importance of post-cleaning for reliable, low-cost hybrid bonding without plasma treatments.
Authors
- Wei-Lan Chiu (ORCID: https://orcid.org/0000-0002-7718-8828)
- Chih Chen (ORCID: https://orcid.org/0000-0001-6235-2827)
- Yuxiang Huang (ORCID: https://orcid.org/0000-0003-4581-2443)
- Huai-En Lin
- Hsiang-Hung Chang
Institutions
- National Yang Ming Chiao Tung University (TW)
- Industrial Technology Research Institute (TW)
Publication Details
- Published
- 2025-04-15
- DOI
- https://doi.org/10.23919/icep-iaac64884.2025.11002942
- Primary Topic
- 3D IC and TSV technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00