Power Variation Analysis During Transient Thermal Measurement of Semiconductor Packages

“Heating time must be long enough to reach the thermal static equilibrium.” This is a basic rule for transient thermal measurement of semiconductor packages. However, there are some situations when it is difficult to follow the rules. Our previous research found the valid data shown in the structure function will be limited to the area closer to the junction when unsaturated heating time is used. In addition, the effect on dissipated power variation was tested for not only ideal rectangular heating pulses but also simplified several different heating pulses. This paper theoretically validates the power variation by using the electrical and thermal models of a silicon carbide (SiC) SBD and MOSFET.