Interfacial Chemistry of Cu(In,Ga)S<sub>2</sub> on GaP/Si: Insights for Tandem Solar Cell Design

This article exposes an in‐depth analysis of the chemical interaction between Cu(In,Ga)S 2 thin‐film and GaP/Si(001) pseudo‐substrate, in the framework of the development of high‐efficiency tandem solar cells on Si. A rich Cu‐Ga‐P‐S chemistry at the Cu(In,Ga)S 2 /GaP interface is uncovered, in the case of Cu(In,Ga)S 2 films grown in Cu‐excess conditions. The involved chemical reactions are studied and modeled by breaking the system down to its binary constituents, such as Cu 2− x S and GaP and by characterizing the reaction products. A chemical model is proposed to explain the chemical fluctuations observed at Cu(In,Ga)S 2 /GaP interface. It is found that Cu‐rich Cu(In,Ga)S 2 decomposes the underlying GaP film. This knowledge of Cu(In,Ga)S 2 /GaP interface chemical reactions can benefit the future development of two‐terminal monolithic Cu(In,Ga)S 2 /Si tandem solar cells.

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Publication Details

Journal
physica status solidi (RRL) - Rapid Research Letters
Published
2025-05-20
DOI
https://doi.org/10.1002/pssr.202500091
Citations
1
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.73

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article

Interfacial Chemistry of Cu(In,Ga)S2 on GaP/Si: Insights for Tandem Solar Cell Design

Sylvie Harel, Olivier Durand, Éric Gautron, Nicolas Barreau et al.
1 citations
physica status solidi (RRL) - Rapid Research Letters
Chalcogenide Semiconductor Thin Films
0.73
article

Interfacial Chemistry of Cu(In,Ga)S2 on GaP/Si: Insights for Tandem Solar Cell Design

Sylvie Harel, Olivier Durand, Éric Gautron, Nicolas Barreau, Léo Choubrac, Ludovic Arzel, Maud Jullien, Charles Cornet, Rozenn Bernard, Antoine Létoublon, Eugene P. Bertin
article en
1 citations

Abstract

This article exposes an in‐depth analysis of the chemical interaction between Cu(In,Ga)S 2 thin‐film and GaP/Si(001) pseudo‐substrate, in the framework of the development of high‐efficiency tandem solar cells on Si. A rich Cu‐Ga‐P‐S chemistry at the Cu(In,Ga)S 2 /GaP interface is uncovered, in the case of Cu(In,Ga)S 2 films grown in Cu‐excess conditions. The involved chemical reactions are studied and modeled by breaking the system down to its binary constituents, such as Cu 2− x S and GaP and by characterizing the reaction products. A chemical model is proposed to explain the chemical fluctuations observed at Cu(In,Ga)S 2 /GaP interface. It is found that Cu‐rich Cu(In,Ga)S 2 decomposes the underlying GaP film. This knowledge of Cu(In,Ga)S 2 /GaP interface chemical reactions can benefit the future development of two‐terminal monolithic Cu(In,Ga)S 2 /Si tandem solar cells.

physica status solidi (RRL) - Rapid Research LettersVol. 19(8)
Centre National de la Recherche Scientifique (FR), Institut National des Sciences Appliquées de Rennes (FR), Institut des Matériaux Jean Rouxel (FR), Fonctions Optiques pour les Technologies de l’information (FR), Université de Rennes (FR), Nantes Université (FR)
European Commission, Agence Nationale de la Recherche, Centre National de la Recherche Scientifique, Région Bretagne, European Regional Development Fund
Openalex Percentile: Top 28%
Chalcogenide Semiconductor Thin Films
0.73
DOIOpen Access PDFOpenAlex
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