Coulomb Blockade and Possible Luttinger Liquid Behaviors in Encapsulated High-Mobility Graphene Nanoribbons

Graphene nanoribbons (GNRs) are highly promising for exploring one-dimensional (1D) correlation physics and constructing digital logic circuits. Here, we report the intrinsic electrical transport behaviors of GNR field-effect transistors (FETs) fabricated using GNRs <i>in situ</i> encapsulated by hexagonal boron nitride (hBN) flakes. The FET devices exhibit excellent performance at room temperature: mobility up to ∼5000 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>, on/off ratio up to ∼10<sup>6</sup>, and subthreshold swing down to ∼70 mV dec<sup>-1</sup>. The devices exhibit periodic conductance peaks and regular Coulomb diamonds due to strong electron-electron repulsion at cryogenic temperatures. Additionally, conductance of the GNR devices exhibits power-law dependence and universal scaling, signatures of Luttinger liquid behaviors, with a tunable Luttinger parameter <i>g</i> ranging from 0.1 to 0.3. Our study demonstrates that the <i>in situ</i> encapsulated GNRs can function as both high-performance FET devices and strongly interacting 1D quantum systems, providing an ideal platform for studying 1D transport and correlated physics.

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Publication Details

Journal
Nano Letters
Published
2025-05-20
DOI
https://doi.org/10.1021/acs.nanolett.4c06064
Citations
3
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
1.55

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article

Coulomb Blockade and Possible Luttinger Liquid Behaviors in Encapsulated High-Mobility Graphene Nanoribbons

Bosai Lyu, Wei Yang, Takashi Taniguchi, Kenji Watanabe et al.
3 citations
Nano Letters
Graphene research and applications
1.55
article

Coulomb Blockade and Possible Luttinger Liquid Behaviors in Encapsulated High-Mobility Graphene Nanoribbons

Bosai Lyu, Wei Yang, Takashi Taniguchi, Kenji Watanabe, Zhenghan Wu, Peiyue Shen, Shuo Lou, Dong Qian, Yufeng Xie, Zhi-Chun Zhang, Zhiwen Shi, S. Ma, Yi Chen, Guangyu Zhang, Jiajun Chen, Liguo Wang, Guohua Wang, Xianliang Zhou, Kunqi Xu, Qi Liang
article en
3 citations

Abstract

Graphene nanoribbons (GNRs) are highly promising for exploring one-dimensional (1D) correlation physics and constructing digital logic circuits. Here, we report the intrinsic electrical transport behaviors of GNR field-effect transistors (FETs) fabricated using GNRs <i>in situ</i> encapsulated by hexagonal boron nitride (hBN) flakes. The FET devices exhibit excellent performance at room temperature: mobility up to ∼5000 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>, on/off ratio up to ∼10<sup>6</sup>, and subthreshold swing down to ∼70 mV dec<sup>-1</sup>. The devices exhibit periodic conductance peaks and regular Coulomb diamonds due to strong electron-electron repulsion at cryogenic temperatures. Additionally, conductance of the GNR devices exhibits power-law dependence and universal scaling, signatures of Luttinger liquid behaviors, with a tunable Luttinger parameter <i>g</i> ranging from 0.1 to 0.3. Our study demonstrates that the <i>in situ</i> encapsulated GNRs can function as both high-performance FET devices and strongly interacting 1D quantum systems, providing an ideal platform for studying 1D transport and correlated physics.

Nano LettersVol. 25(22)
University of Geneva (CH), Shanghai Jiao Tong University (CN), Chinese Academy of Sciences (CN), National Institute for Materials Science (JP), Songshan Lake Materials Laboratory (CN), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), Collaborative Innovation Center of Advanced Microstructures (CN), Nanjing University (CN)
National Natural Science Foundation of China, Japan Society for the Promotion of Science, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 18%
Graphene research and applications
1.55
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