Unraveling the performance enhancement mechanism of Ti doping for Li<sub>4</sub>SiO<sub>4</sub>-based solar energy storage: a combined experimental, kinetic, and DFT study
The reason for the performance enhancement of the heat carrier is that the lattice defects caused by Ti doping increase the ion migration rate.
Authors
- Ruicheng Fu
- Yingchao Hu (ORCID: https://orcid.org/0000-0001-9118-1895)
- He Hongping
- Xiya Liu (ORCID: https://orcid.org/0009-0000-1877-6622)
- Jianchen Yi
- Wei Yuan (ORCID: https://orcid.org/0009-0008-9623-0228)
- Ziyi Ye
Institutions
- Huazhong Agricultural University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry A
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ta02308d
- Citations
- 9
- Primary Topic
- Solar Thermal and Photovoltaic Systems
- Type
- article
- Field-Weighted Citation Impact
- 3.27
Funders
- National Natural Science Foundation of China