Optimization of PVD SiCN Deposition for Cu/SiCN Hybrid Bonding Applications

Cu/dielectric hybrid bonding has emerged as a promising solution, enabling higher integration density, reduced interconnect distances, and minimized power dissipation. A key dielectric in hybrid bonding is silicon carbon nitride (SiCN), known for its excellent surface quality after chemical mechanical polishing (CMP) and strong bonding under low-temperature annealing. Typically deposited via plasma-enhanced chemical vapor deposition (PECVD), SiCN film fabrication introduces added complexity and cost. In this study, we explore a simplified alternative using physical vapor deposition (PVD) for SiCN thin films, eliminating the need for post-deposition annealing. The influence of PVD deposition parameters on the properties of SiCN films was systematically investigated. The results reveal that increasing RF power during deposition enhances film density, as evidenced by a higher refractive index and an increased content of carbon and nitrogen. This leads to the high potential of PVD SiCN as a viable candidate for Cu/dielectric hybrid bonding applications.