Warpage Behavior of Three-Phase SiC MOSFET Power Module During Fabrication

Process-induced warpage is critical in power module fabrication as it impacts operation, alignment, thermal performance, and reliability, leading to reduced yield and production efficiency. Warpage arises primarily from mismatched coefficients of thermal expansion between materials, generating thermal stress during temperature changes. This study aims to investigate the process-induced warpage behavior of a developed 750V/400A three-phase, full-bridge silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module. To achieve this goal, a three-dimensional process-dependent nonlinear finite element analysis (FEA)-based simulation technique is proposed. The focus of this study is placed on the influence of the annealed copper layers in the silicon nitride (Si3N4) active metal brazing (AMB) ceramic substrate and the vacuum suction operation during wire bonding. The process-dependent simulation results are compared against the in-line measurement data. Finally, parametric study is performed to evaluate the effect of several different parameters on the warpage behavior.