Effect of Ion Implantation on Suppression of Stacking Fault Expansion in 4H-SiC

We investigated the possibility to suppress the formation of single Shockley-type stacking faults in 4H-SiC by ion implantation. After treating the SiC wafer with H<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ions at different implantation depths and different dosages. Hyperspectral Raman spectroscopy was used to evaluate the residual stress at different depths of the wafer. We found overall reduction of the residual stress where the ion implantation has been successful.