Selective Synthesis of Large-Area Monolayer Tin Sulfide from Simple Substances

Both tin monosulfide (SnS) and tin disulfide (SnS<sub>2</sub>) are thermodynamically stable layered materials with the potential for spin-valleytronic devices and photodetectors. Notably, SnS, owing to its low symmetry, exhibits interesting properties such as ferroelectricity, shift-current, and a persistent spin helix state in the monolayer limit. Unlike SnS<sub>2</sub>, however, creating large-area atomic-thickness crystals of SnS is challenging, owing to the enhanced interlayer interactions caused by lone pair electrons. Here, we demonstrate that p-type SnS can be selectively grown by varying the sulfur vapor concentration relative to tin using high-purity elemental precursors in a chemical vapor deposition setup. Based on that, we further show that monolayer SnS crystals, up to several tens of micrometers in lateral scale, can be obtained by controlled sublimation of bulk SnS crystals. These findings pave the way for device applications based on high-quality tin sulfide.

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Publication Details

Journal
Nano Letters
Published
2025-05-20
DOI
https://doi.org/10.1021/acs.nanolett.5c01639
Citations
4
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
2.07

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Selective Synthesis of Large-Area Monolayer Tin Sulfide from Simple Substances

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Selective Synthesis of Large-Area Monolayer Tin Sulfide from Simple Substances

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article en
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Abstract

Both tin monosulfide (SnS) and tin disulfide (SnS<sub>2</sub>) are thermodynamically stable layered materials with the potential for spin-valleytronic devices and photodetectors. Notably, SnS, owing to its low symmetry, exhibits interesting properties such as ferroelectricity, shift-current, and a persistent spin helix state in the monolayer limit. Unlike SnS<sub>2</sub>, however, creating large-area atomic-thickness crystals of SnS is challenging, owing to the enhanced interlayer interactions caused by lone pair electrons. Here, we demonstrate that p-type SnS can be selectively grown by varying the sulfur vapor concentration relative to tin using high-purity elemental precursors in a chemical vapor deposition setup. Based on that, we further show that monolayer SnS crystals, up to several tens of micrometers in lateral scale, can be obtained by controlled sublimation of bulk SnS crystals. These findings pave the way for device applications based on high-quality tin sulfide.

Nano LettersVol. 25(25)
Hatch (Canada) (CA), Tohoku University (JP), University of Cambridge (GB), Research & Development Establishment (Engrs.) (IN), National Institutes for Quantum Science and Technology (JP), Graduate School USA (US)
Tohoku University, Engineering and Physical Sciences Research Council, Japan Society for the Promotion of Science, Core Research for Evolutional Science and Technology, Precursory Research for Embryonic Science and Technology, Fusion Oriented REsearch for disruptive Science and Technology
Openalex Percentile: Top 13%
2D Materials and Applications
2.07
DOIOpen Access PDFOpenAlex
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