Synthesis of Metal Oxide Thin Films by Introducing Sn Element Atoms using the Physical Vapor Deposition Method

This study aims to synthesize Nio film doped with Sn element at a ratio (2,4,8 and 16) % by using Physical Vapour Deposition RF Sputtering with annealing at 200, 300, 400, and 500. The results of XRD appear to be crystallizing of the thin film preparation at 500 ºC, and the annealing under this temperature will be amorphous. The SEM and AFM tests of structures, roughness, and particle size found that the particle size will be decreased and surfaces will be smoother with an increase in temperature of annealing at 500 ºC. The roughness value is (22-84) nm, and the lower values of roughness are at 500 ºC. Transmittance decreases with Sn dopant concentration, its minimum occurs for 16% SNO (sample: 3.32 eV), and by increasing more Sn dopant, it gets wider optical band gap. The resistivity decreases by increasing the tin dopant. Annealing drastically lowered the band gap, as we saw in some samples, it ran below, not annealed thin films.