Studies of Raman-Scattered Technology on S-Shaped Dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophene-10 (S-DNTT-10)

S-shaped dinaphtho[2,1-b:2',1'-f]thieno[3,2-b]thiophene (S-DNTT) molecules have shown promise for applications in organic electronic devices, though their molecular characteristics are not fully understood yet. In this study, we first revealed the material characteristics of S-DNTT-10 by vibrational dynamics using Raman spectroscopy and density functional theory (DFT) simulations, employing the B3LYP functional method and the 6-311G (d, p) basis set. The molecular vibrations identified included C-H bending in alkyl chains and the deformation of S-shaped thiophene rings. In addition, surface-enhanced Raman scattering (SERS) with 785 nm incident light was applied to thermally deposited 25 nm S-DNTT-10 thin films with gold (Au) nanostructures. It showed enhanced Raman signals from the lower S-DNTT-10 layers. The findings significantly contribute to the knowledge of S-DNTT-10 molecular properties and also contribute insights into using this material into organic electronic devices in the future.

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Publication Details

Journal
Materials
Published
2025-05-20
DOI
https://doi.org/10.3390/ma18102389
Citations
1
Primary Topic
Molecular Junctions and Nanostructures
Type
article
Field-Weighted Citation Impact
0.73

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article

Studies of Raman-Scattered Technology on S-Shaped Dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophene-10 (S-DNTT-10)

Olivier Simonetti, Florence Etienne, Haobing Wang, Pierre‐Michel Adam et al.
1 citations
Materials
Molecular Junctions and Nanostructures
0.73
article

Studies of Raman-Scattered Technology on S-Shaped Dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophene-10 (S-DNTT-10)

Olivier Simonetti, Florence Etienne, Haobing Wang, Pierre‐Michel Adam, L. Giraudet, Sylvain Potiron, Nicolas Bercu, Oumaima Et-Thakafy
article en
1 citations

Abstract

S-shaped dinaphtho[2,1-b:2',1'-f]thieno[3,2-b]thiophene (S-DNTT) molecules have shown promise for applications in organic electronic devices, though their molecular characteristics are not fully understood yet. In this study, we first revealed the material characteristics of S-DNTT-10 by vibrational dynamics using Raman spectroscopy and density functional theory (DFT) simulations, employing the B3LYP functional method and the 6-311G (d, p) basis set. The molecular vibrations identified included C-H bending in alkyl chains and the deformation of S-shaped thiophene rings. In addition, surface-enhanced Raman scattering (SERS) with 785 nm incident light was applied to thermally deposited 25 nm S-DNTT-10 thin films with gold (Au) nanostructures. It showed enhanced Raman signals from the lower S-DNTT-10 layers. The findings significantly contribute to the knowledge of S-DNTT-10 molecular properties and also contribute insights into using this material into organic electronic devices in the future.

MaterialsVol. 18(10)
Centre National de la Recherche Scientifique (FR), Université de Technologie de Troyes (FR), Université de Reims Champagne-Ardenne (FR)
Indian National Science Academy, Agence Nationale de la Recherche, China Scholarship Council, Ministère de l'Enseignement Supérieur et de la Recherche
Openalex Percentile: Top 28%
Molecular Junctions and Nanostructures
0.73
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Studies of Raman-Scattered Technology on S-Shaped Dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophene-10 (S-DNTT-10) — Olivier Simonetti, Florence Etienne, et al. · Materials (2025) | TGRS Research Map | TGRS