Impact of Electrothermal Effects on Electron and Phonon Dynamics GAAFET Transistor

Modern nanoelectronics, particularly with Metal Oxide Semiconductor (MOS) technology, has enabled the creation of smaller and faster transistors. However, these advancements also lead to significant overheating issues. This study develops a mathematical model to predict the electrothermal properties of a GAA-FET device, focusing on channel lengths of 10 and 50 nm, and evaluates its thermal stability. To achieve this objective, we analyze the limits of miniaturization, heat production in transistors, and introduce the Ballistic-Diffusive Equation (BDE) model. Using COMSOL Multiphysics to solve thermal and electrical equations, we combine the Ballistic-Diffusive and Drift-Diffusion models for a realistic thermal study of GAA-FET. The results, validated by experimental and numerical comparisons (TCAD and Monte Carlo), confirm the validity of the proposed model and the necessity of thermal studies for GAA-FET transistors.