Normally-Off, Quasi-Vertical GaN FinFETs on Sapphire Substrates With Fin Widths Structured by i-Line Lithography in the 100 nm Range

This work reports on the fabrication of vertical GaN FinFETs on a sapphire substrate. The FinFET concept allows for realizing normally-off transistors with dense multi-channel structures. However, using time-consuming e-beam lithography represents an obstacle to effective device production at a wafer level. Therefore, this work investigates the possibility of creating thin fins at submicrometer dimensions below a width of 200nm using i-line lithography. Starting with broad fins and thinning them with a wet etch resulted in an undesired shortening of the length of the fins, necessitating structuring the fins with widths significantly below the used wavelength. Our process proves capable of achieving fin widths in the range of 100 nm. The FinFETs consist of at least 100 fins and exhibit a maximum averaged threshold voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub>) of (0.90 ± 0.10) V. <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> displays the expected parabolic decrease with increasing fin width, becoming negative at around 400 nm. The contributions of the accumulation channel and the bulk fin are distinguished in the transconductance profile. Small-signal RF characterization of a device featuring a fin width of 370nm shows maximum values of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> = 3.3 GHz and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> = 5.2 GHz.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2025-05-20
DOI
https://doi.org/10.1109/led.2025.3571986
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
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article

Normally-Off, Quasi-Vertical GaN FinFETs on Sapphire Substrates With Fin Widths Structured by i-Line Lithography in the 100 nm Range

R. Quay, Matthias Sinnwell, R. Driad, S. Müller et al.
IEEE Electron Device Letters
GaN-based semiconductor devices and materials
article

Normally-Off, Quasi-Vertical GaN FinFETs on Sapphire Substrates With Fin Widths Structured by i-Line Lithography in the 100 nm Range

R. Quay, Matthias Sinnwell, R. Driad, S. Müller, M. Mikulla, Michael Dammann
article en

Abstract

This work reports on the fabrication of vertical GaN FinFETs on a sapphire substrate. The FinFET concept allows for realizing normally-off transistors with dense multi-channel structures. However, using time-consuming e-beam lithography represents an obstacle to effective device production at a wafer level. Therefore, this work investigates the possibility of creating thin fins at submicrometer dimensions below a width of 200nm using i-line lithography. Starting with broad fins and thinning them with a wet etch resulted in an undesired shortening of the length of the fins, necessitating structuring the fins with widths significantly below the used wavelength. Our process proves capable of achieving fin widths in the range of 100 nm. The FinFETs consist of at least 100 fins and exhibit a maximum averaged threshold voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub>) of (0.90 ± 0.10) V. <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> displays the expected parabolic decrease with increasing fin width, becoming negative at around 400 nm. The contributions of the accumulation channel and the bulk fin are distinguished in the transconductance profile. Small-signal RF characterization of a device featuring a fin width of 370nm shows maximum values of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> = 3.3 GHz and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> = 5.2 GHz.

IEEE Electron Device LettersVol. 46(7)
Fraunhofer Institute for Applied Solid State Physics (DE)
Openalex Percentile: Top 93%
GaN-based semiconductor devices and materials
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