Fully Transparent and Self-Powered Planar Photodetector Based on $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Thin Film

In this study, both simulation and elaboration of a planar fully transparent photodetector based on beta gallium oxide (β-Ga203) semiconductor as absorption layer has been carried out. The device in question is simulated and elaborated based on low cost technological process and relatively high electrical and optical performances. The latter consist of quartz as a substrate, Ga203 thin film at beta phase with n-type semiconductor layer. Both indium zinc tin oxide (IZTO) and indium tin oxide (ITO) were used as Schottky and ohmic contacts, respectively. This selection of materials was made according to their low cost and availability, their high electrical and optical properties. The dark versus illumination current result shows an important contrast ratio. 0.18 AIW and 98 % prove the high performance of the elaborated photodetector for the responsivity and the quantum efficiency, respectively.