A Highly-Efficient Wideband GaN Power Amplifier for Sub-6 GHz 5G Applications
This paper presents the design and network synthesis approach to achieve a wideband and highly efficient power amplifier (PA) based on GaN HEMT technology. A design strategy for the synthesis of wide band matching network using Chebyshev multi-section transformer with a short stub at the output is discussed in detail.For the input matching network a stepped-impedance matching transformer based technique is used. Large-signal measurement results of realized wide band PA achieves saturated output power of 39.9-40.1 dBm, power gain between 8.1-13.8 dB and power added efficiency (PAE) of 50-68% over frequency band of 0.4-4.0 GHz.
Authors
- Maruf Ahmed (ORCID: https://orcid.org/0000-0002-4933-0874)
- Jamal Haider (ORCID: https://orcid.org/0009-0002-3136-6913)
- Sohaib Yaqoob Chaudhry
Institutions
- National University of Sciences and Technology (PK)
Publication Details
- Published
- 2025-04-17
- DOI
- https://doi.org/10.1109/icmac64768.2025.11003243
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00