X-Ray Irradiation of AlGaN/GaN Lateral Heterojunction Schottky Diode
X-ray irradiation is performed in order to study the behavior of lateral hetero-junction Schottky diode to help predict the effect of X-ray on recessed gate HEMT based on the same process flow. The Schottky diodes are subjected to high dose rate X-ray and present a threshold voltage positive shift as well as an increase of reverse current leakage on I-V characteristics. 100°C annealing is performed, and the depth of the traps and their origin is identified through fitting of detrapping model with experimental Forward Voltage shift post-annealing. Hypothesis regarding the increased current leakage are proposed following observed I-V measurements. The obtained results will be used as basis for further studies of components with the same process flow, in order to devise a rad-hard version of components.
Authors
- A. Michez (ORCID: https://orcid.org/0000-0002-1012-9620)
- Julien Buckley (ORCID: https://orcid.org/0000-0003-0082-9903)
- René Escoffier (ORCID: https://orcid.org/0000-0003-2312-9299)
- Timothée Labau (ORCID: https://orcid.org/0009-0007-5409-1584)
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université de Montpellier (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
- Université Grenoble Alpes (FR)
Publication Details
- Journal
- IEEE Transactions on Nuclear Science
- Published
- 2025-05-20
- DOI
- https://doi.org/10.1109/tns.2025.3571724
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00