Temperature Effects on Electrical Characteristics of 20 nm Finfet Transistor

In this work, the effects of electrical polarization on 20 nm FinFET devices are studied at various temperature values. FinFET operation is described using an electrical model based on an enhanced drift-diffusion (D-D) model. However, we introduce a new expression for electron mobility to improve the D-D model. The Finite Element Method is employed to obtain results. Based on experimental and numerical results, our model can effectively interpret the degradation of electrical characteristics in the studied FinFET. Moreover, this research demonstrates that the temperature significantly impacts the IDS-VDS characteristics of the studied FinFET, leading to a decrease in performance.