Optimization of I<sub>Dlin</sub>–I<sub>Dsat</sub> Mismatch in 1200 V P-Channel LDMOS by Channel-End Potential Modulation

The current mismatch between the linear region (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dlin</roman></sub><roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">)</roman> and saturation region (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dsat</roman></sub><roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">)</roman> of the 1200 V P-channel lateral diffused MOS (PLDMOS) hinders the design of the level shift circuit, because the value of the load resistor is difficult to determine. In this work, high P-drift doping concentration and partially spaced gate (PSG) are used for channel-end potential modulation, and the global potential control technology is adopted to maintain high breakdown voltage (BV). By increasing channel-end potential, the saturation of intrinsic MOS (IMOS) is promoted to ensure the PLDMOS operating in the saturation region, and then the excessive <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dsat</roman></sub> is limited. Besides, the high P-drift doping concentration also enhances the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dlin</roman></sub> of PLDMOS. The experimental results show that the ratio of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dlin</roman></sub> (at <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>GS</roman></sub> = -15 V and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>DS</roman></sub> = -5 V) to <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dsat</roman></sub> (at <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>GS</roman></sub> = -15 V and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>DS</roman></sub> = -1200 V) has been increased from 3.9% to 36.4%. The off-state BV and on-state BV at <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>GS</roman></sub> = -15 V of the proposed PLDMOS are 1681 and 1587 V, respectively.

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Journal
IEEE Transactions on Electron Devices
Published
2025-05-20
DOI
https://doi.org/10.1109/ted.2025.3568373
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
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article

Optimization of IDlin–IDsat Mismatch in 1200 V P-Channel LDMOS by Channel-End Potential Modulation

Jie Ma, Chengwu Pan, Min Sun, Nailong He et al.
IEEE Transactions on Electron Devices
Silicon Carbide Semiconductor Technologies
article

Optimization of IDlin–IDsat Mismatch in 1200 V P-Channel LDMOS by Channel-End Potential Modulation

Jie Ma, Chengwu Pan, Min Sun, Nailong He, Dejin Wang, Haoyu Li, Long Zhang, Sen Zhang, Siyang Liu, Weifeng Sun
article en

Abstract

The current mismatch between the linear region (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dlin</roman></sub><roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">)</roman> and saturation region (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dsat</roman></sub><roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">)</roman> of the 1200 V P-channel lateral diffused MOS (PLDMOS) hinders the design of the level shift circuit, because the value of the load resistor is difficult to determine. In this work, high P-drift doping concentration and partially spaced gate (PSG) are used for channel-end potential modulation, and the global potential control technology is adopted to maintain high breakdown voltage (BV). By increasing channel-end potential, the saturation of intrinsic MOS (IMOS) is promoted to ensure the PLDMOS operating in the saturation region, and then the excessive <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dsat</roman></sub> is limited. Besides, the high P-drift doping concentration also enhances the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dlin</roman></sub> of PLDMOS. The experimental results show that the ratio of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dlin</roman></sub> (at <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>GS</roman></sub> = -15 V and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>DS</roman></sub> = -5 V) to <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dsat</roman></sub> (at <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>GS</roman></sub> = -15 V and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>DS</roman></sub> = -1200 V) has been increased from 3.9% to 36.4%. The off-state BV and on-state BV at <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>GS</roman></sub> = -15 V of the proposed PLDMOS are 1681 and 1587 V, respectively.

IEEE Transactions on Electron DevicesVol. 72(7)
Southeast University (CN)
National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province
Openalex Percentile: Top 91%
Silicon Carbide Semiconductor Technologies
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