Optimization of I<sub>Dlin</sub>–I<sub>Dsat</sub> Mismatch in 1200 V P-Channel LDMOS by Channel-End Potential Modulation
The current mismatch between the linear region (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dlin</roman></sub><roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">)</roman> and saturation region (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dsat</roman></sub><roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">)</roman> of the 1200 V P-channel lateral diffused MOS (PLDMOS) hinders the design of the level shift circuit, because the value of the load resistor is difficult to determine. In this work, high P-drift doping concentration and partially spaced gate (PSG) are used for channel-end potential modulation, and the global potential control technology is adopted to maintain high breakdown voltage (BV). By increasing channel-end potential, the saturation of intrinsic MOS (IMOS) is promoted to ensure the PLDMOS operating in the saturation region, and then the excessive <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dsat</roman></sub> is limited. Besides, the high P-drift doping concentration also enhances the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dlin</roman></sub> of PLDMOS. The experimental results show that the ratio of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dlin</roman></sub> (at <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>GS</roman></sub> = -15 V and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>DS</roman></sub> = -5 V) to <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>Dsat</roman></sub> (at <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>GS</roman></sub> = -15 V and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>DS</roman></sub> = -1200 V) has been increased from 3.9% to 36.4%. The off-state BV and on-state BV at <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>GS</roman></sub> = -15 V of the proposed PLDMOS are 1681 and 1587 V, respectively.
Authors
- Jie Ma (ORCID: https://orcid.org/0009-0005-6816-5420)
- Chengwu Pan
- Min Sun (ORCID: https://orcid.org/0000-0001-6955-9257)
- Nailong He
- Dejin Wang (ORCID: https://orcid.org/0000-0002-1484-7419)
- Haoyu Li (ORCID: https://orcid.org/0009-0004-7555-2093)
- Long Zhang (ORCID: https://orcid.org/0000-0003-0254-6085)
- Sen Zhang (ORCID: https://orcid.org/0000-0001-8645-3032)
- Siyang Liu (ORCID: https://orcid.org/0000-0001-6498-9901)
- Weifeng Sun (ORCID: https://orcid.org/0000-0002-3289-8877)
Institutions
- Southeast University (CN)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2025-05-20
- DOI
- https://doi.org/10.1109/ted.2025.3568373
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Jiangsu Province