Effect of Substrate Temperature on Structural and Morphological Properties of Ga2O3 NPS Thin Films by (PLD) Method

In this study, thin films of Gallium oxide nanoparticles were deposited using the method ‎of ‎pulsed laser deposition (PLD) on a glass substrate under different ‏substrate temperatures ‏‎(400, 500,‎‏ ‏and ‎‎600 K ) before and after annealing. The Nd-YAG laser was utilized at the wavelength ( 1064 nm ) and the ‎frequency ‎‎(5 Hz) at 130 0C. The effect of substrate temperature value before and after annealing on the Structural and morphological Properties was studied by UV-VIS, X-ray diffraction ‎‏)‏XRD), scanning ‎electron ‎microscopy(SEM) and Atomic force microscopy (AFM) . The outcomes XRD showed ‎that the ‎structure of Ga2O3 nanoparticles is a polycrystalline structure of the monoclinic type with ‎Prominent crystal orientations of (-401), (-202), (- 111 ), (111), and (-312)‎‏.‏‎ It is ‎according to JCPDS card No.‎‏00‏‎-041-1103. Crystallite size for complete models increased with the growth substrate temperature value before and after annealing. The results of (SEM) for gallium oxide nanoparticles prepared ‎with ‎different substrate temperatures (400, 500, and 600 k) before and ‎after ‎annealing showed that the films increase their homogeneity and the ‎voids ‎decrease with increasing temperatures. The energy band gap decreased with increasing substrate temperatures, and the ‎absorption ‎ edge was in the UV zone..