Indacenodithiophene-4,9-dione-Based D-A-D Type Dopant-Free Hole Transporting Materials for Environmentally Robust 30% Efficient Indoor Perovskite Solar Cells

To develop low-light responsive materials for perovskite solar cells (PSCs), for the first time, we synthesized s-indaceno[1,2-b:5,6-b’]-dithiophene-4,9-dione core acceptor linked 4-methoxy-N-(4-methoxyphenyl)-N-phenylaniline and N,N-diphenylaniline end-cap donors based on symmetrical donor–acceptor–donor (D-A-D) type two hole-transporting materials (HTMs), TPA-IDT-OMe and TPA-IDT-H. The relative synthetic costs of the two HTMs, TPA-IDT-OMe and TPA-IDT-H, are about one-seventh and one-fifth times cheaper, respectively, compared to the commercially available spiro-OMeTAD. Both the symmetrical D-A-D type HTMs presented good thermal stability, remarkable photophysical and electrochemical properties, along with down-shifted HOMO energy levels, extended π-conjugation, and enhanced π-π stacking in the film state. Moreover, the methoxy group-bearing TPA-IDT-OMe exhibited superior hole extraction and hole mobilities with negligible bimolecular recombination at the perovskite/HTM interfaces due to the suitable band alignment with the perovskite energy levels, a more planar conjugated backbone, and improved intermolecular π-π stacking in the film state, which led to better interaction with the perovskite layer. As a result, the PSCs from dopant-free TPA-IDT-OMe yielded an impressive power conversion efficiency (PCE) value of 30.19%, with high open-circuit voltage (Voc), short-circuit current density (Jsc) and fill factor (FF) values of 0.89 V, 157.30 μA/cm2, and 70.30%, respectively, under indoor light illumination (1000 lx, 321.6 μW/cm2) which is comparable to the PCE value of the doped spiro-OMeTAD-based devices. Moreover, TPA-IDT-OMe showed remarkable UV stability after 240 h of aging and admissible moisture stability with relative humidity (RH) of (40% ± 5%) at room temperature due to its greater hydrophobicity compared to TPA-IDT-H and the reference spiro-OMeTAD. The poor solubility of TPA-IDT-H illustrates its poor film formation ability, which results in greater bimolecular and trap-assisted recombination and lower hole mobility, leading to a lower PCE value of 27.08% for the undoped TPA-IDT-H-based PSCs. This finding opens a new path to design low-light responsive D-A-D architecture-based small molecular HTMs for efficient and stable indoor perovskite solar cells.

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Publication Details

Journal
Energy & Fuels
Published
2025-05-19
DOI
https://doi.org/10.1021/acs.energyfuels.5c00946
Citations
5
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
3.65

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article

Indacenodithiophene-4,9-dione-Based D-A-D Type Dopant-Free Hole Transporting Materials for Environmentally Robust 30% Efficient Indoor Perovskite Solar Cells

Buddhadeb Mondal, Rahul Tiwari, Suman Kalyan Samanta, Sibu Manna et al.
5 citations
Energy & Fuels
Perovskite Materials and Applications
3.65
article

Indacenodithiophene-4,9-dione-Based D-A-D Type Dopant-Free Hole Transporting Materials for Environmentally Robust 30% Efficient Indoor Perovskite Solar Cells

Buddhadeb Mondal, Rahul Tiwari, Suman Kalyan Samanta, Sibu Manna, Chitrak Ghosh, Prasun Kumar, Ranbir Singh
article en
5 citations

Abstract

To develop low-light responsive materials for perovskite solar cells (PSCs), for the first time, we synthesized s-indaceno[1,2-b:5,6-b’]-dithiophene-4,9-dione core acceptor linked 4-methoxy-N-(4-methoxyphenyl)-N-phenylaniline and N,N-diphenylaniline end-cap donors based on symmetrical donor–acceptor–donor (D-A-D) type two hole-transporting materials (HTMs), TPA-IDT-OMe and TPA-IDT-H. The relative synthetic costs of the two HTMs, TPA-IDT-OMe and TPA-IDT-H, are about one-seventh and one-fifth times cheaper, respectively, compared to the commercially available spiro-OMeTAD. Both the symmetrical D-A-D type HTMs presented good thermal stability, remarkable photophysical and electrochemical properties, along with down-shifted HOMO energy levels, extended π-conjugation, and enhanced π-π stacking in the film state. Moreover, the methoxy group-bearing TPA-IDT-OMe exhibited superior hole extraction and hole mobilities with negligible bimolecular recombination at the perovskite/HTM interfaces due to the suitable band alignment with the perovskite energy levels, a more planar conjugated backbone, and improved intermolecular π-π stacking in the film state, which led to better interaction with the perovskite layer. As a result, the PSCs from dopant-free TPA-IDT-OMe yielded an impressive power conversion efficiency (PCE) value of 30.19%, with high open-circuit voltage (Voc), short-circuit current density (Jsc) and fill factor (FF) values of 0.89 V, 157.30 μA/cm2, and 70.30%, respectively, under indoor light illumination (1000 lx, 321.6 μW/cm2) which is comparable to the PCE value of the doped spiro-OMeTAD-based devices. Moreover, TPA-IDT-OMe showed remarkable UV stability after 240 h of aging and admissible moisture stability with relative humidity (RH) of (40% ± 5%) at room temperature due to its greater hydrophobicity compared to TPA-IDT-H and the reference spiro-OMeTAD. The poor solubility of TPA-IDT-H illustrates its poor film formation ability, which results in greater bimolecular and trap-assisted recombination and lower hole mobility, leading to a lower PCE value of 27.08% for the undoped TPA-IDT-H-based PSCs. This finding opens a new path to design low-light responsive D-A-D architecture-based small molecular HTMs for efficient and stable indoor perovskite solar cells.

Energy & Fuels
Indian Institute of Technology Kharagpur (IN), Indian Institute of Technology Mandi (IN)
Council of Scientific and Industrial Research, India, Indian Institute of Technology Kharagpur
Responsible consumption and production
Openalex Percentile: Top 7%
Perovskite Materials and Applications
3.65
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