Single Atomic Layer Controllable Exfoliation of Graphene Using Pulsed Ion Beam

The characteristics and properties of 2D materials are heavily influenced by their surface and interface structures, especially the integrity of the atomic layers on their surfaces. However, traditional growth and processing methods face challenges in achieving extensive and complete atomic layer surfaces on a large scale. This study introduces a pulsed ion beam (PIB) technique for the selective and controlled exfoliation of atomic layers, facilitating the precise exfoliation of individual atomic layers across large-scale areas. PIB technology meticulously regulates the sputtering energy of the ion beam, keeping it between the thresholds of defect sputtering and intact surface preservation. This approach selectively removes atomic layers exhibiting surface defects while maintaining the integrity of the underlying intact atomic layer. This method offers a broader processing window and demonstrates enhanced performance and quality compared to conventional techniques. Notably, PIB allows the batch production of complete atomic layer surfaces over large areas. This research provides improved fabrication solutions for semiconductors, photodetection, and synthetic catalysis applications, thereby expanding the potential for innovative uses of 2D materials.