Na-doped Ga<sub>2</sub>O<sub>3</sub> electrolyte-gated synaptic transistors for neuromorphic computing
This work presents Na-doped Ga 2 O 3 three-terminal electrolyte-gated synaptic transistors that successfully emulate a range of synaptic behaviors for neuromorphic computing.
Authors
- Shuqiong Lan (ORCID: https://orcid.org/0000-0002-9058-5799)
- Wangying Xu (ORCID: https://orcid.org/0000-0002-8862-7224)
- Yayong Chen
- Qiubao Lin
- Lan Yang (ORCID: https://orcid.org/0009-0009-3115-7733)
- Jierui Lin
Institutions
- Jimei University (CN)
- San’an Optoelectronics (China) (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01248a
- Citations
- 6
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 4.38
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Fujian Province
- Jimei University