Metal halide perovskites as gate dielectrics for transistor applications: progress and perspectives
This perspective discusses metal halide perovskites (MHPs) as gate dielectrics for transistor-based devices. The authors discuss the electrolytic dielectric characteristics of MHPs, focusing on understanding the dielectric polarizability of MHPs.
Authors
- Vivian Nketia‐Yawson
- Jea Woong Jo (ORCID: https://orcid.org/0000-0001-8086-2644)
- Benjamin Nketia‐Yawson (ORCID: https://orcid.org/0000-0002-3525-1550)
- Jihyeon Lee (ORCID: https://orcid.org/0000-0001-9744-8968)
Institutions
- Dongguk University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01358e
- Citations
- 1
- Primary Topic
- Perovskite Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Research Foundation of Korea