Single crystal growth and electronic structure of Fe-doped Sr<sub>3</sub>Ir<sub>2</sub>O<sub>7</sub>

Abstract Metal–insulator transition (MIT) in perovskite iridium oxides Sr n +1 Ir n O 3 n +1 represents one of the most attractive phenomena exemplifying the cooperation of Coulomb interaction and spin–orbit coupling (SOC). MIT takes place when Sr n +1 Ir n O 3 n +1 ( n = 1, 2) is doped with carriers. While electron-doped Sr n +1 Ir n O 3 n +1 ( n = 1, 2) systems have been extensively investigated, hole-doped samples are still limited. Here, we report the first growth of Fe-doped (hole-doped) Sr 3 Ir 2 O 7 single crystals [Sr 3 (Ir 1− x Fe x ) 2 O 7 ] with the doping level 0.1 ≤ x ≤ 0.28. An MIT behavior is observed at the doping level of x ∼ 0.16 from resistivity measurements. Electronic structures of Fe-doped Sr 3 Ir 2 O 7 have been revealed by angle-resolved photoemission spectroscopy (ARPES) measurements. The evident energy shift of the band structure indicates higher hole-doping level as compared with Rh-doped Sr 3 Ir 2 O 7 . Our results demonstrate that Fe doping serves as an effective approach for heavily hole doping in Sr 3 Ir 2 O 7 , thereby offering a powerful strategy to modulate MIT in this material system.

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Publication Details

Journal
Chinese Physics B
Published
2025-05-19
DOI
https://doi.org/10.1088/1674-1056/adda0b
Primary Topic
Advanced Condensed Matter Physics
Type
article
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Single crystal growth and electronic structure of Fe-doped Sr3Ir2O7

Jun-Feng He, Linwei Huai, Xiupeng Sun, Jianchang Shen et al.
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Chinese Physics B
Advanced Condensed Matter Physics
article

Single crystal growth and electronic structure of Fe-doped Sr3Ir2O7

Jun-Feng He, Linwei Huai, Xiupeng Sun, Jianchang Shen, Zhipeng Ou, Yu Miao, Hongxu Sun, Shuting Peng, Zhe Chuan Feng, Yong Xie, Bingqian Wang, Muhammad Waqas, Pan Dai, Pelda Uzun, Runqing Luan
article en

Abstract

Abstract Metal–insulator transition (MIT) in perovskite iridium oxides Sr n +1 Ir n O 3 n +1 represents one of the most attractive phenomena exemplifying the cooperation of Coulomb interaction and spin–orbit coupling (SOC). MIT takes place when Sr n +1 Ir n O 3 n +1 ( n = 1, 2) is doped with carriers. While electron-doped Sr n +1 Ir n O 3 n +1 ( n = 1, 2) systems have been extensively investigated, hole-doped samples are still limited. Here, we report the first growth of Fe-doped (hole-doped) Sr 3 Ir 2 O 7 single crystals [Sr 3 (Ir 1− x Fe x ) 2 O 7 ] with the doping level 0.1 ≤ x ≤ 0.28. An MIT behavior is observed at the doping level of x ∼ 0.16 from resistivity measurements. Electronic structures of Fe-doped Sr 3 Ir 2 O 7 have been revealed by angle-resolved photoemission spectroscopy (ARPES) measurements. The evident energy shift of the band structure indicates higher hole-doping level as compared with Rh-doped Sr 3 Ir 2 O 7 . Our results demonstrate that Fe doping serves as an effective approach for heavily hole doping in Sr 3 Ir 2 O 7 , thereby offering a powerful strategy to modulate MIT in this material system.

Chinese Physics BVol. 34(10)
University of Science and Technology of China (CN)
Openalex Percentile: Top 93%
Advanced Condensed Matter Physics
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