Interlayer coupling induced quantum phase transition in quantum anomalous Hall multilayers
The ability to control topological quantum phases is central to advancing next-generation electronic technologies. The authors demonstrate here a quantum phase transition between quantum anomalous Hall states, with Chern numbers $C$=1 and 2, in magnetically doped topological insulator (TI) pentalayers. By systematically varying the thickness of the middle magnetically doped TI spacer layer, the authors identify interlayer coupling as the key driver of the transition. The finding opens new opportunities for chiral edge transport in device applications.
Authors
- Cui‐Zu Chang (ORCID: https://orcid.org/0000-0003-3515-2955)
- Yi‐Fan Zhao (ORCID: https://orcid.org/0000-0002-8605-9745)
- Kaijie Yang
- Deyi Zhuo (ORCID: https://orcid.org/0009-0006-9808-5808)
- Ling‐Jie Zhou (ORCID: https://orcid.org/0000-0003-2621-6734)
- Ruobing Mei (ORCID: https://orcid.org/0009-0005-4591-7220)
- Han Tay
- Moses H. W. Chan (ORCID: https://orcid.org/0000-0002-9582-527X)
- Zi‐Jie Yan (ORCID: https://orcid.org/0000-0001-6176-319X)
- Ruoxi Zhang (ORCID: https://orcid.org/0000-0003-2265-5844)
- Chao‐Xing Liu (ORCID: https://orcid.org/0000-0003-1881-1365)
Institutions
- Pennsylvania State University (US)
Publication Details
- Journal
- Physical review. B./Physical review. B
- Published
- 2025-05-19
- DOI
- https://doi.org/10.1103/physrevb.111.l201304
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science Foundation
- Gordon and Betty Moore Foundation
- Army Research Office