p-Type Surface Defects on n-GaN Nanorods

Nanowire surfaces are of particular interest, primarily for their potential in optoelectronic applications. Thus, different surface treatments have been performed to develop methods for controlling the surface effect. Here, we successfully shifted the n-type surface states in n-type GaN nanorods to p-type states in the challenging regime, i.e., the blue regime. This was achieved through reverse charge transfer driven by an electrostatic field induced by surface strain. The p-type surface state demonstrates an inverted photovoltage mechanism, as well as a stable blue photoluminescence at room temperature under ambient conditions, within the n-type GaN nanorods. The inverted charge transfer at the surface of the GaN nanorod array was determined by X-ray photoelectron spectroscopy (XPS), surface photovoltage, Kelvin probe, Raman, and photoluminescence measurements. The mechanism and the study's conclusions have been supported experimentally and theoretically. This surface state inversion approach offers a new strategy for regulating p-n junctions in low-dimensional nanomaterials.

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Publication Details

Journal
Nano Letters
Published
2025-05-19
DOI
https://doi.org/10.1021/acs.nanolett.5c01839
Citations
3
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
3.77

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article

p-Type Surface Defects on n-GaN Nanorods

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3 citations
Nano Letters
GaN-based semiconductor devices and materials
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article

p-Type Surface Defects on n-GaN Nanorods

Kefan Zhang, Awad Shalabny, Aeid Igbaria, Sherina Harilal, Andam Deatama Refino, Sumesh Sadhujan, Nursidik Yulianto, Riam Abu‐Much, Mariela J. Pavan, Amro Sweedan, Hutomo Suryo Wasisto, Muhammad Y. Bashouti, Laila Abu Madegam, Abdullah AbuBekr, Ayat Asleh
article en
3 citations

Abstract

Nanowire surfaces are of particular interest, primarily for their potential in optoelectronic applications. Thus, different surface treatments have been performed to develop methods for controlling the surface effect. Here, we successfully shifted the n-type surface states in n-type GaN nanorods to p-type states in the challenging regime, i.e., the blue regime. This was achieved through reverse charge transfer driven by an electrostatic field induced by surface strain. The p-type surface state demonstrates an inverted photovoltage mechanism, as well as a stable blue photoluminescence at room temperature under ambient conditions, within the n-type GaN nanorods. The inverted charge transfer at the surface of the GaN nanorod array was determined by X-ray photoelectron spectroscopy (XPS), surface photovoltage, Kelvin probe, Raman, and photoluminescence measurements. The mechanism and the study's conclusions have been supported experimentally and theoretically. This surface state inversion approach offers a new strategy for regulating p-n junctions in low-dimensional nanomaterials.

Nano LettersVol. 25(22)
Ben-Gurion University of the Negev (IL), Sumatera Institute of Technology (ID), Institute of Semiconductor Physics (RU), The Arab Academic College for Education in Israel (IL), Technische Universität Braunschweig (DE)
Israel Science Foundation, Ben-Gurion University of the Negev
Openalex Percentile: Top 7%
GaN-based semiconductor devices and materials
3.77
DOIOpen Access PDFOpenAlex
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