D-Band Dicke Switch Based Passive Imager with 0.13K NETD in 28nm CMOS Technology
Mm-wave passive imaging, detecting blackbody radiation, is a great complement to Infra-red counterparts to pass through barriers, such as walls and glasses, and the passive feature without signal generation favors low power consumption. The most critical performance is the temperature resolution, defined as Noise Equivalent Temperature Difference (NETD). In atmosphere windows, 35, 94, 140, and 220 GHz, D-band has become increasingly popular due to its good trade-off between the spatial resolution, system size and device capabilities. While D-band systems are available with III-V technologies in various applications, recent attention has shifted toward CMOS technology despite its higher flicker noise compared to SiGe. This interest stems from CMOS's advantages in low power consumption and its unparalleled integration capabilities.
Authors
- Zahra Mohseni (ORCID: https://orcid.org/0000-0002-3058-7653)
- Sajjad Sabbaghi
- Hai Yu (ORCID: https://orcid.org/0000-0002-8024-1781)
- Peng Han (ORCID: https://orcid.org/0000-0002-1976-5738)
- Jane Gu
Institutions
- Georgia Institute of Technology (US)
- Nvidia (United States) (US)
- University of California, Davis (US)
Publication Details
- Published
- 2025-04-13
- DOI
- https://doi.org/10.1109/cicc63670.2025.10983043
- Citations
- 2
- Primary Topic
- CCD and CMOS Imaging Sensors
- Type
- article
- Field-Weighted Citation Impact
- 1.46