A 93.9% Peak Efficiency 3V-to-40V-Input GaN-based DC-DC Converter with Unified Reliability and Efficiency Adaptive Control

A Gallium Nitride (GaN)-based DC-DC converter has received large research attention for automotive applications since it can support a wide range of input voltage, e.g., from 3V to 40V, to cover car battery voltage fluctuations at higher efficiency [1]–[3]. However, the reliability of GaN switches is a serious concern, especially in the harsh environment commonly found in such applications. The intrinsic failure mechanisms, where elevated junction temperatures <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(T_{j})$</tex> and excessive gate-to-source <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{V}_{\text{gs}})$</tex> and drain-to-source voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{V}_{\text{ds}})$</tex> cause the degradations in the on-state resistance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{R}_{0\cap})$</tex> and threshold voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{V}_{\text{th}})$</tex> of a GaN device [4]. Recent works have proposed various reliability management techniques [5]–[15]. However they are still limited in the multiple ways. First of all, all of the prior works solely focus on reliability but it is critical to manage both reliability and efficiency. Also, some of the works employed an open-loop control, whose effectiveness is lower than the closed-loop control [9]–[15]. Also, none of the works monitor all four critical parameters, <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{R}_{0}, \mathrm{V}_{\text{th}}, T_{j}$</tex>, and inductor current <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(I_{s})$</tex>, nor utilize all two critical control knobs, switching frequency (Fsw) and gate drive swing <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{V}_{\text{drv}})$</tex>, to maximize reliability and efficiency via a closed-loop control.

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Published
2025-04-13
DOI
https://doi.org/10.1109/cicc63670.2025.10983119
Primary Topic
GaN-based semiconductor devices and materials
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article

A 93.9% Peak Efficiency 3V-to-40V-Input GaN-based DC-DC Converter with Unified Reliability and Efficiency Adaptive Control

Nachiket Desai, Minxiang Gong, Yichen Xu, Mingoo Seok et al.
3 links
GaN-based semiconductor devices and materials
article

A 93.9% Peak Efficiency 3V-to-40V-Input GaN-based DC-DC Converter with Unified Reliability and Efficiency Adaptive Control

Nachiket Desai, Minxiang Gong, Yichen Xu, Mingoo Seok, Xin Zhang, Suhwan Kim, Zhaoqing Wang, Ram Krishnamuthy
article en

Abstract

A Gallium Nitride (GaN)-based DC-DC converter has received large research attention for automotive applications since it can support a wide range of input voltage, e.g., from 3V to 40V, to cover car battery voltage fluctuations at higher efficiency [1]–[3]. However, the reliability of GaN switches is a serious concern, especially in the harsh environment commonly found in such applications. The intrinsic failure mechanisms, where elevated junction temperatures <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(T_{j})$</tex> and excessive gate-to-source <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{V}_{\text{gs}})$</tex> and drain-to-source voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{V}_{\text{ds}})$</tex> cause the degradations in the on-state resistance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{R}_{0\cap})$</tex> and threshold voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{V}_{\text{th}})$</tex> of a GaN device [4]. Recent works have proposed various reliability management techniques [5]–[15]. However they are still limited in the multiple ways. First of all, all of the prior works solely focus on reliability but it is critical to manage both reliability and efficiency. Also, some of the works employed an open-loop control, whose effectiveness is lower than the closed-loop control [9]–[15]. Also, none of the works monitor all four critical parameters, <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{R}_{0}, \mathrm{V}_{\text{th}}, T_{j}$</tex>, and inductor current <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(I_{s})$</tex>, nor utilize all two critical control knobs, switching frequency (Fsw) and gate drive swing <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{V}_{\text{drv}})$</tex>, to maximize reliability and efficiency via a closed-loop control.

Intel (United Kingdom) (GB), Columbia University (US)
Affordable and clean energy
Openalex Percentile: Top 93%
GaN-based semiconductor devices and materials
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