A 104-to-132 GHz 16-way Power Amplifier Using Enhanced Magnetic Coupling Cavity Achieving 21.2 dBm Output Power in 28nm Bulk CMOS

The ultra-wide absolute bandwidth in the sub-THz range enables high data rate communication and high-precision sensing. CMOS technology, particularly in the D-band (110-170GHz), has demonstrated notable potential in these applications [1]–[2]. In D-band transceiver links, high output power amplifiers (PAs) are essential to compensate for the significant path loss at high frequencies. However, CMOS technology in D-band faces challenges such as substantial passive losses, limited gain, low output power capabilities, and low reliable source-drain voltage. This leads to reduced output power in CMOS-based PAs, constraining the performance of communication and sensing links.