A 16nm 140-fJ/b/dB Dual-Mode ENRZ/NRZ Serial Data Transceiver with Dynamic Voltage Scaling
A dual-mode long-reach serial data transceiver supporting both Non-Return to Zero (NRZ) and Ensemble NRZ (ENRZ) signaling schemes is presented. Low power dissipation, compatibility with the conventional design architectures, low sensitivity to Inter-Symbol Interference (ISI), and maintaining a high level of signal integrity are the key aspects of the proposed ENRZ link. Supporting USB and Display Port (DP) [1], [2] standards in NRZ mode, the ENRZ mode has been added as a test option to demonstrate the capability of ENRZ signaling to enhance the link throughput by 50% at the same baud-rate as NRZ, without compromising signal integrity, while enhancing energy-efficiency. Implemented in 16 nm FinFET, the proposed link covers Nyquist channel losses ranging from 6 dB up to 28 dB, with a BER better than 1 E-13 when operating at 20 Gbaud, i.e., 10 Gb/s/wire (NRZ) and 15 Gb/s/wire (ENRZ).
Authors
- Patryk J. Urban (ORCID: https://orcid.org/0000-0001-5546-3115)
- Milad Ataei
- Giuseppe Surace
- D. Stauffer (ORCID: https://orcid.org/0000-0002-3812-6464)
- James Hudner
- Armin Tajalli (ORCID: https://orcid.org/0000-0002-0222-3561)
- Kiarash Gharibdoust (ORCID: https://orcid.org/0000-0001-5936-9126)
- Amin Shokrollahi (ORCID: https://orcid.org/0000-0001-7938-7022)
- Victor Perrin
- Cosimo Aprile (ORCID: https://orcid.org/0000-0002-6558-7688)
- Andrew Stewart
- Ali Hormati
- R. S. Simpson
- Roger Ulrich
- Anant Singh
- Mark Venneborger
- Rolf Beerwerth
- Dario Carneli
- Maik Fuhs
Publication Details
- Published
- 2025-04-13
- DOI
- https://doi.org/10.1109/cicc63670.2025.10982712
- Primary Topic
- VLSI and Analog Circuit Testing
- Type
- article
- Field-Weighted Citation Impact
- 0.00